? design assistance ? assembly assistance ? die handling consultancy ? hi - rel die qualification ? hot & cold die probing ? electrical test & trimming ? customised pack sizes / qtys ? support for all industry recognised ? 100% visual inspection contact baredie@micross.com for price, delivery and to place orders HMC292 supply formats: o waffle pack o gel pak o tape & reel ? onsite storage, stockholding & scheduling ? on - site failure analysis ? bespoke 24 hour monitored storage systems for secure long term product support o mil - std 883 condition a o mil - std 883 condition a ? on - site failure analysis www.analog.com www.micross.com
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mixers - double-balanced - chip 1 HMC292 v 07.1112 gaas mmic double-balanced mixer, 18 - 32 ghz general description features functional diagram input ip3: +19 dbm lo / rf isolation: 38 db passive: no dc bias required small size: 1.04 x 0.58 x 0.1 mm electrical specifcations, t a = +25 c typical applications the HMC292 is ideal for: ? microwave point-to-point radios ? lmds ? satcom the HMC292 chip is a miniature passive gaas mmic double-balanced mixer which can be used as an upconverter or downconverter from 18 - 32 ghz in a small chip area of 0.66 mm 2 . excellent isolations are provided by on-chip baluns, which require no external components and no dc bias. all data is measured with the chip in a 50 ohm test fxture connected via 0.076 mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils). parameter lo = +13 dbm lo = +13 dbm units min. typ. max. min. typ. max. frequency range, rf & lo 20 - 30 18 - 32 ghz frequency range, if dc - 8 dc - 8 ghz conversion loss 7. 5 9.5 9 11 db noise figure (ssb) 7. 5 9.5 9 11 db lo to rf isolation 30 38 30 38 db lo to if isolation 31 40 28 40 db rf to if isolation 20 24 17 24 db ip3 (input) 17 19 15 19 db ip2 (input) 45 50 42 50 dbm 1 db gain compression (input) 8 12 8 12 dbm for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - double-balanced - chip 2 HMC292 v 07.1112 g a a s mmic double-b a l a nced mie - g c g lo b i lo b c g lo d lo l lo b i b lo b u c g lo b -20 -15 -10 -5 0 15 20 25 30 35 +25 c +85 c -55 c conversion gain (db) frequency (ghz) -50 -40 -30 -20 -10 0 15 20 25 30 35 lo/rf lo/if rf/if isolation (db) frequency (ghz) -20 -15 -10 -5 0 15 20 25 30 35 +8 dbm +10 dbm +13 dbm +15 dbm conversion gain (db) frequency (ghz) -20 -15 -10 -5 0 15 20 25 30 35 lo rf return loss (db) frequency (ghz) -20 -15 -10 -5 0 0246810 conversion gain retrun loss if conversion gain & return loss (db) if frequency (ghz) -20 -15 -10 -5 0 15 20 25 30 35 conversion gain (db) frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - double-balanced - chip 3 HMC292 v 07.1112 g a a s mmic double-b a l a nced mie - g i i lo d i i lo b i i lo d i i lo b mn s o i b lo b nlo mrf 0 1 2 3 4 0 xx 11 1 17 0 39 2 70 77 76 3 93 69 86 4 >110 >110 >110 rf = 21 ghz @ -10 dbm lo = 22 ghz @ +13 dbm all values in dbc below the if power level. -5 0 5 10 15 20 25 15 20 25 30 35 +8 dbm +10 dbm +13 dbm ip3 (dbm) frequency (ghz) 0 5 10 15 20 25 15 20 25 30 35 -55c +25c +85c ip3 (dbm) frequency (ghz) 0 10 20 30 40 50 60 70 80 15 20 25 30 35 +8 db, +10 dbm +13 dbm ip2 (dbm) frequency (ghz) 0 10 20 30 40 50 60 70 80 15 20 25 30 35 -55c +25c +85c ip2 (dbm) frequency (ghz) 5 7 9 11 13 15 15 20 25 30 35 -55c +25c +85c p1db (dbm) frequency (ghz) for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - double-balanced - chip 4 HMC292 v 07.1112 g a a s mmic double-b a l a nced mie - g o d a m rf / lo total power +24 dbm if input +16 dbm channel temperature 150 c continuous pdiss (ta=85 c) (derate 4 mw/c above 85 c) 260 mw thermal resistance (r th ) (junction to die bottom) 250 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c esd sensitivity (hbm) class 1c notes: 1. all dimensions are in inches [mm]. 2. die thickness is .004. 3. typical bond pad is .004 square. 4. backside metallization: gold. 5. bond pad metallization: gold. 6. backside metal is ground. 7. connection not required for unlabeled bond pads. die paain information [1] standard alternate gp-5 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. electrostatic sensitive device observe handling precautions for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - double-balanced - chip 5 HMC292 v 07.1112 g a a s mmic double-b a l a nced mie - g pad number function description interface schematic 1 lo this pin is dc coupled and matched to 50 ohms. 2 rf this pin is dc coupled and matched to 50 ohms. 3 if this pin is dc coupled. for applications not requiring operation to dc, this port should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. for operation to dc, this pin must not source/ sink more than 2 ma of current or die non-function and possible die failure will result. die bottom gnd die bottom must be connected to rf/dc ground. for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
mixers - double-balanced - chip 6 HMC292 v 07.1112 g a a s mmic double-b a l a nced mie - g m b m ga mmic the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com
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